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RTAX-S radiation-tolerant FPGAs offer industry-leading advantages for
designers of space-flight systems. High performance and low-power consumption,
true single-chip form factor, and live-at-power-up operation all combine
to make RTAX-S the FPGA of choice for space designers. From concept to
final integration and flight, Microsemi provides the tools and support to help
you successfully integrate your space-flight application into RTAX-S radiation-tolerant
FPGAs. Additionally, for space applications that have a need for a lower
standby current, Microsemi offers RTAX-SL, the low-power grade option that
has half the standby current of the standard product at worst-case conditions.
RTAX-S/SL offers high performance at densities of up
to 4 million equivalent system gates and 840 user I/Os for space-based
applications. The RTAX-S/SL family, the leading Microsemi
product offering for space applications, features SEU-hardened flip-flops
implemented without any user intervention, and offers the benefits of user-implemented
triple module redundancy (TMR) without the associated overhead.
Key Features
- Highly reliable, nonvolatile antifuse technology
- 30 k to 500 k ASIC gates (250 k to 4 M system gates)
- Up to 540 kbits of embedded memory with optional EDAC protection
- Up to 840 user-programmable I/Os
- Total Dose: 300 kRads (functional) and 200 kRads (parametric)
- SEU less than 1E-10 errors per bit-day (worst-case GEO)
- SEL immune to LETTH in excess of 117 MeV-cm2/mg
- SEU immune to LETTH > 37 MeV-cm2/mg
- Advanced packaging for space applications (CQFP and CCGA/LGA)
- Qualified to QML class Q and QML class V
- Screening: E-Flow (Microsemi Extended Flow), B-Flow (Mil-STD-883B), and
V-Flow (MIL-PRF-38535)
- RTAX-SL: Low-power grade option with half the standby
current of standard product at worst case conditions
Product Table
| Device |
RTAX250S/SL |
RTAX1000S/SL |
RTAX2000S/SL |
RTAX4000S/SL |
| Capacity |
| Equivalent System Gates |
250,000 |
1,000,000 |
2,000,000 |
4,000,000 |
| ASIC Gates |
30,000 |
125,000 |
250,000 |
500,000 |
| Modules |
| Register (R-cells) |
1,408 |
6,048 |
10,752 |
20,160 |
| Combinatorial (C-cells) |
2,816 |
12,096 |
21,504 |
40,320 |
| Embedded RAM/FIFO (without EDAC) |
| Core RAM Blocks |
12 |
36 |
64 |
120 |
| Core RAM Bits (k=1,024) |
54 k |
162 k |
288 k |
540 k |
| Clocks (segmentable) |
| Hardwired |
4 |
4 |
4 |
4 |
| Routed |
4 |
4 |
4 |
4 |
| I/Os |
| I/O Banks |
8 |
8 |
8 |
8 |
| User I/Os (maximum) |
198
|
418 |
684 |
840 |
| I/O Registers |
744 |
1,548 |
2,052 |
2,520 |
| Speed Grades |
Std., -1 |
Std., -1 |
Std., -1 |
Std., -1 |
| Temperature Grades |
E, B, V |
E, B, V |
E, B, V |
E, B, V |
| Package |
| CCGA/LGA |
624 |
624 |
624, 1152 |
1272 |
| CQFP |
208, 352 |
352 |
256, 352 |
352 |
The RTAX-S/SL radiation-tolerant
FPGAs comprise a new feature-rich family based on the commercial Axcelerator architecture
and are specifically designed for space applications. The high density
gives designers the advantages of a flexible programmable platform on payload
designs, which historically have required radiation-hardened ASICs (RH-ASICs).
The increased on-chip functionality gives designers the flexibility to
perform last minute design changes without incurring additional costs and
without any impact on design time.
RTAX-S/SL offers higher density, higher performance,
and more features than previous generations of Microsemi radiation-tolerant FPGAs.
SEU-hardened flip-flops use built-in TMR, so they do not require user intervention
and do not consume additional programmable logic gates for hardware implementation
or host CPU machine cycles for software implementation. SEU-hardened flip-flops
are not sensitive to place-and-route locations, thus preserving their SEU
immunity.
The RTAX-S/SL family has hot-swap and cold-sparing capabilities,
which enable a device to be turned off for minimal power consumption during
long space missions and activated only when functionality is required for
mission completion.
The RTAX-S/SL FPGAs family possesses an unprecedented 33 million device-hours of reliability data from flight and commercial-equivalent units. There have been no antifuse faults to date. A failure in time (FIT) has been calculated to be less than 10 based on the chi-square distribution, with a minimum upper confidence limit of 60% per JESD74 and an activation energy of Ea = 0.7 eV.
RTAX-S/SL FPGAs are now QML Class V qualified, allowing customers to source the highest quality and reliability FPGAs by simply referencing the DLA Standard Military Drawing (SMD) part numbers. QML Class V parts include 2000 hours life test on each wafer lot and Destructive Physical Analysis (DPA) on each assembly lot. This provides scheduling and cost benefit as customers do not need to perform these tests on their own.
Radiation Performance
- Single-Event Effects
- Testing performed at BNL and Texas A & M 2004
- SEL and SEDR
- Testing performed up to LETTH 117 MeV/cm2-mg
(125° C)
- No SEL or SEDR observed
- No clock or control logic upset observed
- Single-Event Transient
- High-frequency testing (with NASA Goddard Space Flight Center) up to 150 MHz—no anomalies found
- Logic Single-Event Upset (SEU)
- Cross-section < 1E-9 cm2
- LETTH > 37 MeV-cm2/mg
- SEU per R-Cell < 4E-11 Errors/bit-day (worst case
GEO)
- Better than the targeted 1E-10 upsets/bit-day
- Memory SEU
- Cross-section / word ~ 4E-9 cm2, LETTH > 30 MeV-cm2/mg
- EDAC operational, background scrubbing at 2 MHz
- SEU < 1E-10 upsets/bit-day (worst case GEO)
- Total Ionizing Dose
- Initial results indicate suitability for vast majority of space missions
- No parametric failure up to 200 kRads (Si)
- No functional failure up to 300 kRads (Si)
Total Ionizing Dose (TID)
Total Ionizing Dose (TID) is caused by radiation due to charged particles
and gammas in space. This radiation deposits energy by causing ionization
in the material. The ionization can change the charge excitation, charge
transport, bonding, and decomposition properties of the material, and therefore,
the device parameters. Total dose is the cumulative ionizing radiation that
an electronic device receives over a specified period of time. The damage
is dependent on the amount of radiation and how long it took to accumulate
the total dose and is expressed in Radiation Absorbed Dose (RAD). Microsemi publishes
RTAX-S
TID reports so that customers can use the radiation data when designing
applications with high-reliability needs.
Single-Event Effects (SEE)
Ionizing radiation can cause unwanted effects in semiconductor devices. Energetic
protons, neutrons, heavy ions, and alpha particles can strike sensitive regions
of the transistor, causing various failures, or SEE,
such as the following:
- Single-Event Upsets (SEUs), which occur when high-energy ionizing particles,
such as heavy ions, alpha particles or protons, irradiate a circuit or
pass through an integrated circuit, causing a disruption in the system
logic.
- Single-Event Latch-Up (SEL) is a condition that causes a device to
lose functionality due to a single-event-induced high current state.
An SEL may or may not cause permanent device damage, but it does require
power strobing of the device to resume normal device operations. Devices
with low (< 37.5 MeV-cm2/mg) SEL LETTH are considered
unsuitable for space applications.
- Single-Event Transient (SET) upsets are caused by charges accumulated
in reverse-biased junctions in CMOS digital circuits at higher frequencies
Microsemi publishes
SEE test
reports so that customers can take the data into consideration while
designing space systems.
The RTAX-S/SL family of FPGAs is fully supported by Microsemi Libero® Integrated Design Environment (IDE), a design management environment that guides the user through the
FPGA design flow and provides seamless design tool integration, as well
as project, data file, and log file management. Libero IDE enables users
to integrate both schematic and HDL synthesis into a single flow and verify
the entire design in a single environment. The Microsemi Designer toolset
is included for backend product implementation and programming file generation.
Prototyping Solutions

For the early development phase and functional verification, Microsemi offers commercial Axcelerator products as a cost-effective way to prototype for RTAX-S/SL designs. Most RTAX-S/SL products have a footprint-compatible equivalent device in ceramic package that customers can use for prototyping. For those package types that do not have footprint-compatible Axcelerator equivalent devices, prototyping adaptors are offered to pin-map the Axcelerator devices to RTAX-S/SL package footprints.
In these early phases, customers can also prototype with Microsemi's flash-based reprogrammable ProASIC3 devices. Aldec provides the software that remaps antifuse primitives to flash which reduces design time and cost. In addition, the hardware adaptor is foot-print compatible with RTAX-S/SL, and therefore, a customer does not need to redesign a new board for prototyping. For more info, refer to http://www.microsemi.com/soc/products/solutions/milaero/rtaxsproto.aspx
For final design verification, Microsemi offers the RTAX-S/SL/DSP PROTO units that have the same footprint and timing characteristics as the flight unit. The RTAX-S/SL/DSP PROTO units guarantee performance over the full military temperature range. These solutions offer tremendous savings in design time by eliminating design cycles, which translates into overall lower development costs.
Programmers
Programming support for RTAX-S devices is provided through Microsemi's
Silicon
Sculptor 3, a PC-based programmer that delivers high data throughput
and promotes ease of use, while lowering the overall cost of ownership. RTAX-S
adapter
modules are also available.
Search for
RTAX-S/SL IP Cores.
| Technology Solutions |
 |
Does not require additional configuration nonvolatile memory in order
to load the device configuration data at every system power-up, which
reduces cost and increases security and system reliability. |
|
Antifuse programmable technology is inherently protected against
reverse engineering and unauthorized duplication. » More
|
| Firm
Error Immune |
Antifuse configuration elements cannot be altered by high-energy
heavy ions that abound in space and are therefore suitable for different
types of space applications. |
|
Greatly simplifies system design, making the device available to
perform critical system setup tasks and reduce bill-of-materials costs
and PCB area. » More
|
Military and Aerospace Solutions